Low-Cost and High-Productivity Three-Dimensional …
We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a …
We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a …
Here, we report on 3D dielectric capacitors fully-integrated in silicon with areal capacitance up to 1 μF/mm 2, and power and energy density of 566 W/cm 2 and 1.7 μWh/cm 2, respectively. The value of the areal capacitance sets a new record for silicon capacitors.
Excellent stability with voltage and temperature (capacitance variation <2% up to 16 V and 100 °C). Capacitors are the most critical passive components of future in-package and on-chip electronic systems with augmented energy-storage capabilities for consumer and wearable applications.
To summarize, silicon-integrated 3D capacitors with unprecedented areal capacitance up to 1 μF/mm 2 were fabricated by ultra-high aspect-ratio (up to 100) electrochemical trenching of silicon and subsequent conformal coating with Al 2 O 3 and HfAlO x by atomic layer deposition.
On the other hand, integrated dielectric capacitors (DCs) able to operate at higher voltage (tens of Volts) and higher frequencies (hundreds of kHz to MHz) suffer from significantly lower capacitance and energy densities.
The 3D capacitors feature operating frequency and voltage up to 70 kHz and 16 V, respectively, and excellent reliability over 100 h of continuous operation (>10 8 charge/discharge cycles), versus operation voltage and temperature.
The capacitance density of about 47 μF/cm 2 for 6-μm-thick HA-AAO was achieved, and the breakdown voltage of about 15 V was observed. As a result, the energy density of the unique dielectric capacitor can reach about 2 Wh/kg through optimizing the fabrication process.
We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a …
Here, we report on 3D dielectric capacitors fully-integrated in silicon with areal capacitance up to 1 μF/mm 2, and power and energy density of 566 W/cm 2 and 1.7 μWh/cm 2, respectively. The value of the areal capacitance sets a new record for silicon capacitors.
We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al
In this work, we successfully address the challenge of achieving a 3D silicon-based dielectric capacitor with high capacitance density and large operation voltage and …
We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO …
Here, we demonstrate the experimental design of an en-ergy storage material framework that combines the concept of the conventional solid-state capacitor architecture with the high …
We demonstrate the correlation between experimentally measured capacitance and modeled capacitance for the SWNT–Al 2 O 3 system, and further predict a material …
The fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template are reported, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant ...
Abstract— This paper demonstrates the successful integration of three-dimensional (3-D) metal-insulator-metal (MIM) capacitors embedded in fully-filled Cu TSVs with diameter of 10 and 20 …
This paper demonstrates the successful integration of three-dimensional (3-D) metal-insulator-metal (MIM) capacitors embedded in fully-filled Cu TSVs with diameter of 10 and 20 μm. Their thermo-mechanical reliability has been studied with both physical characterizations and electrical characterizations.
Here, we demonstrate the experimental design of an en-ergy storage material framework that combines the concept of the conventional solid-state capacitor architecture with the high surface area electrode that permits the comparably large energy density in an EDLC device.
Abstract— This paper demonstrates the successful integration of three-dimensional (3-D) metal-insulator-metal (MIM) capacitors embedded in fully-filled Cu TSVs with diameter of 10 and 20 μm. Their thermo-mechanical reliability has been studied with both physical characterizations and electrical characterizations.
We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO ...
We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces.
In this work, we successfully address the challenge of achieving a 3D silicon-based dielectric capacitor with high capacitance density and large operation voltage and frequency range, using a fabrication process that is compatible with silicon ICs technology.
We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode …
This paper demonstrates the successful integration of three-dimensional (3-D) metal-insulator-metal (MIM) capacitors embedded in fully-filled Cu TSVs with diameter of 10 and 20 μm. Their …
Here, we report on 3D dielectric capacitors fully-integrated in silicon with areal capacitance up to 1 μF/mm 2, and power and energy density of 566 W/cm 2 and 1.7 μWh/cm …
The fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO …
We demonstrate the correlation between experimentally measured capacitance and modeled capacitance for the SWNT–Al 2 O 3 system, and further predict a material framework that can yield both high power and high energy densities utilizing better dielectric materials and optimized SWNT array geometries. 2. Experimental details. 2.1.
Stay updated with the latest news and trends in solar energy and storage. Explore our insightful articles to learn more about how solar technology is transforming the world.